A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices

被引：136

作者：

Xue, Cheng-Xin ^{[1
]}

Hung, Je-Min ^{[1
]}

Kao, Hui-Yao ^{[1
]}

Huang, Yen-Hsiang ^{[1
]}

Huang, Sheng-Po ^{[1
]}

Chang, Fu-Chun ^{[1
]}

Chen, Peng ^{[1
]}

Liu, Ta-Wei ^{[1
]}

Jhang, Chuan-Jia ^{[1
]}

Su, Chin-, I ^{[2
]}

Khwa, Win-San ^{[2
]}

Lo, Chung-Chuan ^{[1
]}

Liu, Ren-Shuo ^{[1
]}

Hsieh, Chih-Cheng ^{[1
]}

Tang, Kea-Tiong ^{[1
]}

Chih, Yu-Der ^{[1
]}

Chang, Tsung-Yung Jonathan ^{[2
]}

Chang, Meng-Fan ^{[1
,2
]}

机构：

[1] Natl Tsing Hua Univ, Hsinchu, Taiwan

[2] TSMC, Hsinchu, Taiwan

来源：

2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC) | 2021年 / 64卷

关键词：

D O I：

10.1109/ISSCC42613.2021.9365769

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：246 / +

页数：3

共 6 条

[1]

Chen WH, 2018, ISSCC DIG TECH PAP I, P494, DOI 10.1109/ISSCC.2018.8310400

[2]

Dong Q, 2020, ISSCC DIG TECH PAP I, P242, DOI [10.1109/ISSCC19947.2020.9062985, 10.1109/isscc19947.2020.9062985]

[3]

Liu Q, 2020, ISSCC DIG TECH PAP I, P500, DOI 10.1109/ISSCC19947.2020.9062953

[4]

Mochida R, 2018, 2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, P175, DOI 10.1109/VLSIT.2018.8510676

[5] 15.4 A 22nm 2Mb ReRAM Compute-in-Memory Macro with 121-28TOPS/W for Multibit MAC Computing for Tiny AI Edge Devices [J].

Xue, Cheng-Xin ;

Huang, Tsung-Yuan ;

Liu, Je-Syu ;

Chang, Ting-Wei ;

Kao, Hui-Yao ;

Wang, Jing-Hong ;

Liu, Ta-Wei ;

Wei, Shih-Ying ;

Huang, Sheng-Po ;

Wei, Wei-Chen ;

Chen, Yi-Ren ;

Hsu, Tzu-Hsiang ;

Chen, Yen-Kai ;

Lo, Yun-Chen ;

Wen, Tai-Hsing ;

Lo, Chung-Chuan ;

Liu, Ren-Shun ;

Hsieh, Chih-Cheng ;

Tang, Kea-Tiong ;

Chang, Meng-Fan .

2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC), 2020, :244-+

[6]

Xue CX, 2019, ISSCC DIG TECH PAP I, V62, P388, DOI 10.1109/ISSCC.2019.8662395

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