A Low Voltage Steep Turn-Off Tunnel Transistor Design

被引：0

作者：

Patel, Pratik ^{[1
]}

Jeon, Kanghoon ^{[1
]}

Bowonder, Anupama ^{[1
]}

Hu, Chenming ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94709 USA

来源：

2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2009年

关键词：

PARAMETERS;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A new tunneling transistor structure is introduced that offers several advantages over prior designs. Notably, tunneling area is substantially increased. Turn on/off swing is improved by engineering doping profile to ensure tunneling initiates in high electric field region. TCAD simulations explore the critical design considerations. The concept of heterojunction tunneling is introduced as a means to achieve low effective band gap and low voltage operation for the design in consideration.

引用

页码：23 / 26

页数：4