A Low Voltage Steep Turn-Off Tunnel Transistor Design

被引：0

作者：

Patel, Pratik ^{[1
]}

Jeon, Kanghoon ^{[1
]}

Bowonder, Anupama ^{[1
]}

Hu, Chenming ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94709 USA

来源：

2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2009年

关键词：

PARAMETERS;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A new tunneling transistor structure is introduced that offers several advantages over prior designs. Notably, tunneling area is substantially increased. Turn on/off swing is improved by engineering doping profile to ensure tunneling initiates in high electric field region. TCAD simulations explore the critical design considerations. The concept of heterojunction tunneling is introduced as a means to achieve low effective band gap and low voltage operation for the design in consideration.

引用

页码：23 / 26

页数：4

共 50 条

[1] Design and novel turn-off mechanism in transistor lasers
Wu, Bohao
Dallesasse, John M.
Leburton, Jean-Pierre
JOURNAL OF PHYSICS-PHOTONICS, 2021, 3 (03):
[2] Low ON-State Voltage Optically Triggered Power Transistor for SiC Emitter Turn-OFF Thyristor
Mojab, Alireza
Mazumder, Sudip K.
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (05) : 484 - 486
[3] Turn-off switching analysis considering dynamic avalanche effect for low turn-off loss high-voltage IGBTs
Ogura, T
Ninomiya, H
Sugiyama, K
Inoue, T
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (04) : 629 - 635
[4] ANALYSIS OF INSULATED GATE TRANSISTOR TURN-OFF CHARACTERISTICS
BALIGA, BJ
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) : 74 - 77
[5] Turn-off strategies for low-saturation IGBTs to reduce turn-off losses
Nayampalli, Vishwas Acharya
da Cunha, Julian
Eckel, Hans-Guenter
2021 23RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'21 ECCE EUROPE), 2021,
[6] Design and Optimization of N-type SiC Gate Turn-off Thyristor with High Turn-off Gain and High Breakdown Voltage
Ma, Hongming
Wang, Yan
2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT), 2021,
[7] MOS PASS TRANSISTOR TURN-OFF TRANSIENT ANALYSIS
KUO, JB
DUTTON, RW
WOOLEY, BA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1545 - 1555
[8] THE FIELD-ASSISTED TURN-OFF THYRISTOR - A REGENERATIVE DEVICE WITH VOLTAGE-CONTROLLED TURN-OFF
PETTI, CJ
PLUMMER, JD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (08) : 1946 - 1953
[9] Turn-off switching voltage surge analysis with dependence on IGBT cell design
Fujimoto, Yuri
Nishizawa, Shin-ichi
Saito, Wataru
JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (02)
[10] A Self-Regulating Method for IGBT Turn-Off Peak Voltage Control with Turn-Off Characteristics Improvement
Ling, Yatao
Zhao, Zhengming
Shi, Bochen
IEEE Access, 2021, 9 : 122207 - 122215

← 1 2 3 4 5 →