Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes

被引：14

作者：

Rao, Gowrish K. ^{[1
]}

Bangera, Kasturi V. ^{[1
]}

Shivakumar, G. K. ^{[1
]}

机构：

[1] Natl Inst Technol Karnataka, Dept Phys, Mangalore 575025, India

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 08期

关键词：

p-ZnTe/n-ZnSe heterojunction; Vacuum deposition; I-V characterization; C-V characterization; Band diagram; ELECTRICAL-PROPERTIES; OPTOELECTRONIC PROPERTIES; FILMS; CDTE;

D O I：

10.1016/j.sse.2010.03.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：787 / 790

页数：4

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