Origin and Tunability of Unusually Large Surface Capacitance in Doped Cerium Oxide Studied by Ambient-Pressure X-Ray Photoelectron Spectroscopy

被引：36
作者：
Gopal, Chirranjeevi Balaji [1 ]
El Gabaly, Farid [2 ]
McDaniel, Anthony H. [2 ]
Chueh, William C. [1 ,2 ,3 ]
机构：
[1] Stanford Univ, Dept Mat Sci & Engn, 496 Lomita Mall, Stanford, CA 94305 USA
[2] Sandia Natl Labs, Livermore, CA 94550 USA
[3] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA
来源：
ADVANCED MATERIALS | 2016年 / 28卷 / 23期
关键词：
LOW-INDEX SURFACES; CHEMICAL CAPACITANCE; THIN-FILMS; ELECTRONIC-STRUCTURE; OXYGEN-ION; NONSTOICHIOMETRY; STORAGE; INTERCALATION; CATALYSIS; TRANSPORT;
D O I：
10.1002/adma.201506333
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The volumetric redox (chemical) capacitance of the surface of CeO2-delta films is quantified in situ to be 100-fold larger than the bulk values under catalytically relevant conditions. Sm addition slightly lowers the surface oxygen nonstoichiometry, but effects a 10-fold enhancement in surface chemical capacitance by mitigating defect interactions, highlighting the importance of differential nonstoichiometry for catalysis.
引用
收藏
页码：4692 / 4697
页数：6
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