Epitaxial growth of Y3Fe5O12 thin films with perpendicular magnetic anisotropy

被引：71

作者：

Fu, Jianbo ^{[1
,2
]}

Hua, Muxin ^{[1
,2
]}

Wen, Xin ^{[1
,2
]}

Xue, Mingzhu ^{[1
,2
]}

Ding, Shilei ^{[1
,2
]}

Wang, Meng ^{[3
]}

Yu, Pu ^{[3
]}

Liu, Shunquan ^{[1
,2
]}

Han, Jingzhi ^{[1
,2
]}

Wang, Changsheng ^{[1
,2
]}

Du, Honglin ^{[1
,2
]}

Yang, Yingchang ^{[1
]}

Yang, Jinbo ^{[1
,4
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Beijing Key Lab Magnetoeletr Mat & Devices, Beijing 100871, Peoples R China

[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 20期

基金：

中国国家自然科学基金;

关键词：

YTTRIUM-IRON-GARNET; TEMPERATURE; DEPOSITION;

D O I：

10.1063/1.4983783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here, we report the realization of epitaxial Y3Fe5O12 (YIG) thin films with perpendicular magnetic anisotropy (PMA). The films are grown on the substituted gadolinium gallium garnet substrate (SGGG) by pulsed laser deposition. It was found that a thin buffer layer of Sm3Ga5O12 (SmGG) grown on top of SGGG can suppress the strain relaxation, which helps induce a large enough PMA to overcome the shape anisotropy in YIG thin films. The reciprocal space mappings analysis reveals that the in-plane strain relaxation is suppressed, while the out-of-plane strain relaxation exhibits a strong dependence on the film thickness. We found that the PMA can be achieved for both bilayer (YIG/SmGG) and tri-layer (SmGG/YIG/SmGG) structural films with YIG layer thicknesses up to 20 nm and 40 nm, respectively. Published by AIP Publishing.

引用

页数：5

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