Resistive interlayer for improved performance of thin film silicon solar cells on highly textured substrate

被引:107
作者
Despeisse, M. [1 ]
Bugnon, G. [1 ]
Feltrin, A. [1 ]
Stueckelberger, M. [1 ]
Cuony, P. [1 ]
Meillaud, F. [1 ]
Billet, A. [1 ]
Ballif, C. [1 ]
机构
[1] EPFL, Photovolta & Thin Film Elect Lab, Inst Microengn, IMT, CH-2000 Neuchatel, Switzerland
关键词
amorphous semiconductors; elemental semiconductors; plasma CVD; semiconductor device reliability; semiconductor growth; semiconductor thin films; silicon; silicon compounds; solar cells;
D O I
10.1063/1.3324704
中图分类号
O59 [应用物理学];
学科分类号
摘要
The deposition of thin-film silicon solar cells on highly textured substrates results in improved light trapping in the cell. However, the growth of silicon layers on rough substrates can often lead to undesired current drains, degrading performance and reliability of the cells. We show that the use of a silicon oxide interlayer between the active area and the back contact of the cell permits in such cases to improve the electrical properties. Relative increases of up to 7.5% of fill factor and of 6.8% of conversion efficiency are shown for amorphous silicon cells deposited on highly textured substrates, together with improved yield and low-illumination performance.
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页数:3
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