An Accurate and Versatile ED- and LD-MOS Model for High-Voltage CMOS IC SPICE Simulation

被引：0

作者：

Tudor, Bogdan ^{[1
]}

Wang, Joddy W. ^{[1
]}

Hu, Bo P. ^{[1
]}

Liu, Weidong ^{[1
]}

Lee, Frank ^{[1
]}

机构：

[1] Synopsys Inc, 700 E Middlefield Rd, Mountain View, CA 94039 USA

来源：

NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION | 2008年

关键词：

high-voltage MOSFET; HVMOS; LDMOS; EDMOS; compact model;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This paper presents a high-voltage compact MOSFET model that has been proven physically accurate and numerically robust for various generations of high-voltage ED (extended drain) and LD (laterally double diffused) production CMOs process technologies. The model takes into account elegantly in formulation almost all of those physical effects identified for high voltage MOSFET operation. They include, but are not limited to: - Quasi saturation. - Bias-dependent, symmetric or asymmetric non-linear source and drain resistances. - Self heating. - Impact ionization in the drift region. - LDMOS-specific charging effects. - Asymmetrical charge response and transport for the forward- and reverse-mode operations of asymmetrical LDMOS.

引用

页码：804 / +

页数：3

共 8 条

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