Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N

被引：50
作者：
Arulkumaran, S [1 ]
Egawa, T
Zhao, GY
Ishikawa, H
Jimbo, T
Umeno, M
机构：
[1] Nagoya Inst Technol, Res Ctr Micro Struct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Nagoya Inst Technol, Venture Business Lab, Showa Ku, Nagoya, Aichi 4668555, Japan
[3] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 4B期
关键词：
GaN; AlGaN; Schottky diode; barrier height; Fermi-level pinning;
D O I：
10.1143/JJAP.39.L351
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical characteristics of Ag, Ti, An, Pd and Ni Schottky contacts on GaN and Al0.11Ga0.89N grown by metalorganic chemical vapour deposition (MOCVD) on sapphire substrates have been investigated. Al0.11Ga0.89N Schottky barrier height values are bit higher than the values of GaN contacts except Ti Schottky contacts. Fermi-level pinning has been observed for both GaN and Al0.11Ga0.89N Schottky contacts. The pinning degree of GaN and Al0.11Ga0.89N are much less than GaAs, Si and GaP, but both of them may be similar to CdS.
引用
收藏
页码：L351 / L353
页数：3
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