Anomalous Hall Effect in Epitaxial Ni-Mn-Ga Thin Films Grown on MgO(001) Substrate during the Martensitic Transformation

被引：3

作者：

Li, Fan ^{[1
,2
]}

Chen, Fenghua ^{[1
,2
]}

Zhang, Mingang ^{[2
]}

Zhang, Kewei ^{[2
]}

Liu, Wenhe ^{[2
]}

Zhao, Dongyang ^{[2
]}

Yang, Bo ^{[1
]}

机构：

[1] Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang, Liaoning, Peoples R China

[2] Taiyuan Univ Sci & Technol, Key Lab Magnet & Elect Funct Mat & Applicat Shanx, Taiyuan 030024, Shanxi, Peoples R China

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2019年 / 32卷 / 10期

基金：

中国博士后科学基金;

关键词：

Ni-Mn-Ga thin films; Martensitic transformation; Magnetoresistance; Anomalous Hall effect; MAGNETIC-PROPERTIES; DEPENDENCE; THICKNESS;

D O I：

10.1007/s10948-019-5073-9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Ni-Mn-Ga thin films had been grown on MgO (001) by DC magnetron sputtering. And the anomalous Hall effect (AHE), microstructures, magnetism, and magnetoresistance (MR) were investigated. The AHE was measured in the film of Ni47.8Mn30.8Ga21.4 during the martensitic transformation. Meanwhile, the mechanism of the AHE was explained which indicates that the hall resistivity measured in our sample is primarily determined by AHE. The microstructures of the austenite phase and 7M martensite plates at room temperature had been observed on the film of Ni46.7Mn31.7Ga21.6 and Ni47.8Mn30.8Ga21.4, respectively. Magnetic measurements reveal that all films possessed the martensitic transformation during the heating and cooling processes. In addition, the MR showed a negative value during the martensitic transformation which is mainly due to the reduction of spin-dependent scattering.

引用

页码：3183 / 3189

页数：7

共 31 条

[1] Tailoring magnetic and magnetocaloric properties of martensitic transitions in ferromagnetic Heusler alloys [J].