Effect of vacuum rapid thermal annealing on the properties of SiNx films

被引：9

作者：

Beshkov, G

Dimitrov, DB

Velchev, N

Petrov, P

Ivanov, B

Zambov, L

Dimitrova, T

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

[2] Paisij Hilendarski Univ Plovdiv, BG-4000 Plovdiv, Bulgaria

[3] Bulgarian Acad Sci, Inst Elect, BU-1784 Sofia, Bulgaria

[4] Univ Chem Technol & Met, Dept Semicond, BU-1756 Sofia, Bulgaria

来源：

VACUUM | 2000年 / 58卷 / 2-3期

关键词：

D O I：

10.1016/S0042-207X(00)00213-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nitride films prepared by different chemical vapor deposition techniques (APCVD, PECVD, mu PCVD, LPCVD) are submitted to rapid thermal annealing (RTA) in vacuum at 800-1400 degrees C for different time intervals of 15-180 s. The samples have been characterized by infra red (IR) spectroscopy and by capacitance-voltage (C-V) measurements before and after RTA. The effect of the RTA on the IR spectra is the gradual shift of the maximum of the Si-N band from 826 to 833.2 cm(-1). The RHEED spectra show that alpha-crystalline phase appears in the SiN layers after the RTA treatment. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：509 / 515

页数：7

共 13 条

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ALEKSANDROV L, 1979, ELECT IND, V30, P28

[2] MORPHOLOGY OF LPCVD SI3N4 FILMS AFTER HIGH-TEMPERATURE TREATMENT AND HF ETCHING [J].