Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

被引：23
作者：
Kuo, C. H. [1 ]
Feng, H. C.
Kuo, C. W.
Chen, C. M.
Wu, L. W.
Chi, G. C.
机构：
[1] Natl Cent Univ, Dept Opt & Photon, Jhongli 320, Taiwan
[2] Formosa Epitaxy Inc, Longtan 325, Taiwan
[3] Natl Cent Univ, Dept Phys, Jhongli 320, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期
关键词：
D O I：
10.1063/1.2720347
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.33 and 3.39 V while output powers were 9.0 and 10.6 mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency. (c) 2007 American Institute of Physics.
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页数：3
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