Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode

被引：0

作者：

Vitusevich, SA

Förster, A

Reetz, W

Lüth, H

Belyaev, AE

Danylyuk, SV

机构：

[1] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

NANOTECHNOLOGY | 2000年 / 11卷 / 04期

关键词：

D O I：

10.1088/0957-4484/11/4/322

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The photoresponsivity spectra of double-barrier resonant tunnelling diodes have been measured in a wide range of light wavelength as well as applied voltage. The complex behaviour of measured spectra is analysed, taking into account different channels for electron injection into the quantum well (QW). The results obtained yield evidence for modulated electron-hole (e-h) recombination in the QW provided by direct excitation of e-h pairs in the QW.

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页码：305 / 308

页数：4

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