Hydrogenated silicon oxycarbonitride films. Part II. Physicochemical and functional properties

被引：4

作者：

Fainer, N. I. ^{[1
]}

Plekhanov, A. G. ^{[1
]}

Rumyantsev, Yu M. ^{[1
]}

Yushina, I. V. ^{[1
]}

Shayapov, V. R. ^{[1
]}

Kichai, V. N. ^{[1
]}

机构：

[1] Russian Acad Sci, Nikolaev Inst Inorgan Chem, Novosibirsk 630090, Russia

来源：

GLASS PHYSICS AND CHEMISTRY | 2014年 / 40卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

thin films; hydrogenated silicon oxycarbonitride; optical properties; dielectric constant; ELECTRONIC-STRUCTURE; CARBONITRIDE;

D O I：

10.1134/S1087659614060042

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The optical, and electrophysical characteristics of hydrogenated silicon oxycarbonitride films synthesized by the plasma enhanced chemical vapor decomposition of the mixtures of 1,1,1,3,3,3-hexamethyldisilazane with oxygen and nitrogen in the temperature range of 373-973 K have been studied. It has been shown that the obtained films are highly transparent (transmittance is similar to 92-99%) in the UV, visible, and IR ranges of the spectrum; they have refractive indices in the range of 1.43-2.25, a low reflection coefficient of visible light (nearly 3%), and low dielectric permittivity.

引用

页码：643 / 649

页数：7

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