Charge Migration in Eyring, Walter and Kimball's 1944 Model of the Electronically Excited Hydrogen-Molecule Ion

被引:14
作者
Diesder, Dennis J. [1 ,3 ]
Hermann, Gunter [3 ]
Manz, Joern [2 ,3 ]
机构
[1] Univ Nebraska, Lincoln, NE 68583 USA
[2] Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Shanxi, Peoples R China
[3] Free Univ Berlin, Inst Chem & Biochem, D-14195 Berlin, Germany
关键词
LASER-PULSES; PEPTIDE CATIONS; GAS-PHASE; DISSOCIATION; IONIZATION; REACTIVITY; NUCLEAR; STATES; FLUX;
D O I
10.1021/acs.jpca.7b04714
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In an elementary variational treatment of the electronic structure of HI, Eyring, Walter, and Kimball (EWK) serendipitously discovered charge migration (CM) in 1944. Using an analytic expression for the electronic probability density (EPD), they found that if the electron is initially localized on one of the protons (by taking the initial state to be a superposition of the ground and first excited electronic energy eigenstates), then it oscillates adiabatically between fixed protons with a period T inversely proportional to the energy gap between the eigenstates. At the equilibrium internuclear separation, T = 550.9 as. As shown here, the EWK model also yields an analytic formula for the electronic flux density (EFD). While the EPD indicates where the electron is at any instant, the EFD reveals the pathways the electron follows during its migration. Thus, the EFD complements the EPD, providing valuable new insight into the mechanism of CM. The formula for the EFD is a simple product of a time factor and a spatial factor. This factoring exposes a plethora of spatial temporal symmetry relations which imply novel and surprising properties. An especially significant finding is that, in contrast to multielectron systems, where electron correlation may play a role in CM, in the EWK model of HI, CM is due strictly to quantum interference between the ground and first excited electronic states.
引用
收藏
页码:5332 / 5340
页数:9
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