The De Haas-Van Alphen effect at high temperatures and in low magnetic fields in semiconductors

被引：10

作者：

Gulyamov, G. ^{[1
]}

Erkaboev, U. I. ^{[2
]}

Sharibaev, N. Yu. ^{[3
]}

机构：

[1] Namangan Engn Pedag Inst, Namangan 160103, Uzbekistan

[2] Acad Sci Uzbek, NGO Phys Sun, Phys Tech Inst, Tashkent 100084, Uzbekistan

[3] Namangan Engn Technol Inst, Namangan 116008, Uzbekistan

来源：

MODERN PHYSICS LETTERS B | 2016年 / 30卷 / 07期

关键词：

Density of states; Landau levels; the numerical simulation and experiment;

D O I：

10.1142/S0217984916500779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed the method of calculation of the temperature dependence of the magnetic susceptibility. We considered the de Haas-van Alphen (dHvA) effect in semiconductors at high temperatures and low magnetic fields. The effect of temperature on dHvA effect is explained with respect to the temperature dependence of the thermodynamic density of states in a magnetic field.

引用

页数：7

共 16 条

[1]

Anselm A. I., 1978, INTRO THEORY SEMICON, P358

[2]

Bagraev N. T., 2012, FIZ TEKH POLUPROV, V46, P90

[3]

Bagraev N. T., 2011, FIZ TEKH POLUPROV, V45, P1503

[4]

Bagraev N. T., 2010, FIZ TEKH POLUPROVODN, V44, P1372

[5]

Bagraev N. T., 2009, FIZ TEKH POLUPROV, V43, P85

[6]

Blatt F., 1971, PHYS ELECT CONDUCTIO, P424

[7]

Gulyamov G., 2013, FYZ INJ POVERKHNOST, V11, P195

[8]

Gulyamov G., 2010, Uzbek Physical Journal, V12, P143

[9]

Gulyamov G., 2011, FIZ TEKH POLUPROV, V45, P178

[10]

Gulyamov G., 2012, FIZ INZHEN POVERKHN, V10, P366

← 1 2 →