Pulsed pumping of silicon nanocrystal light emitting devices

被引：9

作者：

Creazzo, Tim ^{[1
]}

Redding, Brandon ^{[1
]}

Marchena, Elton ^{[1
]}

Murakowski, Janusz ^{[1
]}

Prather, Dennis W. ^{[1
]}

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 11期

关键词：

ELECTROLUMINESCENCE; LUMINESCENCE; EMISSION;

D O I：

10.1364/OE.18.010924

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Typical silicon nanocrystal light emitting devices (LEDs) operate under direct current (DC) biasing conditions that require high electric fields or high current densities. The electroluminescence (EL) under these conditions relies on impact excitation that can be damaging to the material. In this work, we present bipolar injection into silicon nanocrystal LEDs using a pulsed pumping scheme. We measured the frequency dependence of the integrated and time-resolved EL of the LEDs. The frequency dependent behavior of the time-resolved characteristics is used to explain the integrated EL measurements. In addition, the light output of the device was measured under pulsed excitation and was found to increase by a factor of 18 as compared to the case of DC excitation. (C) 2010 Optical Society of America

引用

页码：10924 / 10930

页数：7

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