A 1.2 V reactive-feedback 3.1-10.6 GHz low-noise amplifier in 0.13 μm CMOS

被引：139

作者：

Reiha, Michael T. ^{[1
]}

Long, John R. ^{[1
]}

机构：

[1] Delft Univ Technol, Elect Res Lab, DIMES, NL-2628 CD Delft, Netherlands

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2007年 / 42卷 / 05期

关键词：

bias current-reuse; broadband amplifier; low-noise amplifier; monolithic transformer; reactive feedback; ultrawideband;

D O I：

10.1109/JSSC.2007.894329

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 15.1 dB gain, 2.1 dB (min.) noise figure low-noise amplifier (LNA) fabricated in 0.13 mu m CMOS operates across the entire 3.1-10.6 GHz ultrawideband (UWB). Noise figure variation over the band is limited to 0.43 dB. Reactive (transformer) feedback reduces the noise figure, stabilizes the gain, and sets the terminal impedances over the desired bandwidth. It also provides a means of separating ESD protection circuitry from the RF input path. Bias current-reuse limits power consumption of the 0.87 mm(2) IC to 9 mW from a 1.2 V supply. Comparable measured results are presented from both packaged and wafer probed test samples.

引用

页码：1023 / 1033

页数：11

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