Electron-Phonon Coupling and Electron-Phonon Scattering in SrVO3

被引:28
作者
Mirjolet, Mathieu [1 ]
Rivadulla, Francisco [2 ,3 ]
Marsik, Premysl [4 ]
Borisov, Vladislav [5 ]
Valenti, Roser [6 ]
Fontcuberta, Josep [1 ]
机构
[1] Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain
[2] Univ Santiago Compostela, Ctr Invest Quim Biolox & Mat Moleculares, CIQUS, Santiago De Compostela 15782, Spain
[3] Univ Santiago Compostela, Dept Quim Fis, Santiago De Compostela 15782, Spain
[4] Univ Fribourg, Fac Sci & Med, Dept Phys, CH-1700 Fribourg, Switzerland
[5] Uppsala Univ, Dept Phys & Astron, Box 516, SE-75120 Uppsala, Sweden
[6] Goethe Univ Frankfurt Main, Inst Theoret Phys, D-60438 Frankfurt, Germany
关键词
electron-phonon coupling; polarons; quadratic temperature dependent resistivity; strongly correlated electrons; strontium vanadate epitaxial films; vanadium oxides; 3D(1)-CORRELATED METAL CA1-XSRXVO3; FERROMAGNETIC STATE; BANDWIDTH CONTROL; TRANSITION; RESISTIVITY; TRANSPORT; CONDUCTIVITY;
D O I
10.1002/advs.202004207
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Understanding the physics of strongly correlated electronic systems has been a central issue in condensed matter physics for decades. In transition metal oxides, strong correlations characteristic of narrow d bands are at the origin of remarkable properties such as the opening of Mott gap, enhanced effective mass, and anomalous vibronic coupling, to mention a few. SrVO3 with V4+ in a 3d(1) electronic configuration is the simplest example of a 3D correlated metallic electronic system. Here, the authors' focus on the observation of a (roughly) quadratic temperature dependence of the inverse electron mobility of this seemingly simple system, which is an intriguing property shared by other metallic oxides. The systematic analysis of electronic transport in SrVO3 thin films discloses the limitations of the simplest picture of e-e correlations in a Fermi liquid (FL); instead, it is shown show that the quasi-2D topology of the Fermi surface (FS) and a strong electron-phonon coupling, contributing to dress carriers with a phonon cloud, play a pivotal role on the reported electron spectroscopic, optical, thermodynamic, and transport data. The picture that emerges is not restricted to SrVO3 but can be shared with other 3d and 4d metallic oxides.
引用
收藏
页数:12
相关论文
共 78 条
[1]   Self-Energy on the Low- to High-Energy Electronic Structure of Correlated Metal SrVO3 [J].
Aizaki, S. ;
Yoshida, T. ;
Yoshimatsu, K. ;
Takizawa, M. ;
Minohara, M. ;
Ideta, S. ;
Fujimori, A. ;
Gupta, K. ;
Mahadevan, P. ;
Horiba, K. ;
Kumigashira, H. ;
Oshima, M. .
PHYSICAL REVIEW LETTERS, 2012, 109 (05)
[2]  
[Anonymous], 1960, ELECTRONS PHONONS TH
[3]  
Ashcroft N. W., 1976, Solid state physics
[4]   Control of High Quality SrVO3 Electrode in Oxidizing Atmosphere [J].
Berini, Bruno ;
Demange, Valerie ;
Bouttemy, Muriel ;
Popova, Elena ;
Keller, Niels ;
Dumont, Yves ;
Fouchet, Arnaud .
ADVANCED MATERIALS INTERFACES, 2016, 3 (18)
[5]   Far-infrared ellipsometry using a synchrotron light source -: the dielectric response of the cuprate high Tc superconductors [J].
Bernhard, C ;
Humlícek, J ;
Keimer, B .
THIN SOLID FILMS, 2004, 455 :143-149
[6]  
BOGOMOLOV VN, 1968, FIZ TVERD TELA+, V9, P2502
[7]   Opportunities in vanadium-based strongly correlated electron systems [J].
Brahlek, Matthew ;
Zhang, Lei ;
Lapano, Jason ;
Zhang, Hai-Tian ;
Engel-Herbert, Roman ;
Shukla, Nikhil ;
Datta, Suman ;
Paik, Hanjong ;
Schlom, Darrell G. .
MRS COMMUNICATIONS, 2017, 7 (01) :27-52
[8]   Accessing a growth window for SrVO3 thin films [J].
Brahlek, Matthew ;
Zhang, Lei ;
Eaton, Craig ;
Zhang, Hai-Tian ;
Engel-Herbert, Roman .
APPLIED PHYSICS LETTERS, 2015, 107 (14)
[9]   Weak antilocalization and disorder-enhanced electron interactions in annealed films of the phase-change compound GeSb2Te4 [J].
Breznay, Nicholas P. ;
Volker, Hanno ;
Palevski, Alexander ;
Mazzarello, Riccardo ;
Kapitulnik, Aharon ;
Wuttig, Matthias .
PHYSICAL REVIEW B, 2012, 86 (20)
[10]   Application of Gutzwiller's variational method to the metal-insulator transition [J].
Brinkman, W. F. ;
Rice, T. M. .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4302-4304