Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on GaAs substrates

被引：43
|
作者：
Yamada, M [1 ]
Anan, T [1 ]
Tokutome, K [1 ]
Kamei, A [1 ]
Nishi, K [1 ]
Sugou, S [1 ]
机构：
[1] NEC Corp Ltd, High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 07期
关键词：
quantum-well lasers; semiconductor growth; semiconductor lasers; strain;
D O I：
10.1109/68.853496
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAsSb quantum-well (QW) edge-emitting lasers grown on GaAs substrates were demonstrated. The optical quality of the QW was improved by optimizing the growth conditions and introducing multi-QW to increase gain. As a result, 1.27-mu m lasing of a GaAs0.66Sb0.34-GaAs double-QW laser was obtained with a Low-threshold current density of 440 A/cm(2), which is comparable to that in conventional InP-based long-wavelength lasers, 1.30 mu m lasing with a threshold current density of 770 A/cm(2) was also obtained by increasing the antimony content to 0.36, GaAsSb QW was found to be a suitable material for use in the active layer of 1.3-mu m vertical-cavity surface-emitting lasers.
引用
收藏
页码：774 / 776
页数：3
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