Transmission electron microscopy study by chemical delineation in Si devices

Transmission electron microscopy for a specimen prepared by the chemical delineation technique in Si devices was carried out in order to investigate the dopant profiles of ultra-shallow junctions in various regions. The results demonstrate that the two-dimensional dopant concentration of the junctions can be delineated down to a level of similar to 2.0 x 10(17) cm(-3) with a differentiation of As and P dopant profiles, and can be quantitatively evaluated by comparing the observed and simulated junction profiles. Furthermore, the morphology of metastable polysilicon formed by granulating the polysilicon surface and the thickness of the SiO2-Si3N4-SiO2 dielectric film were clearly observed by stripping the filled polysilicon by the delineation technique.