Transmission electron microscopy study by chemical delineation in Si devices

被引：5

作者：

Back, TS

Yang, JM

Park, TS

Kim, HJ

Lee, SY

Lee, SC

Choi, JH

机构：

[1] Hyundai Elect Ind Co Ltd, Memory R&D Div, Anal Dev Team, Ichonsi 467701, Kyoungkido, South Korea

[2] Hyundai Elect Ind Co Ltd, Device Phys Dept, Ichonsi 467701, Kyoungkido, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 6A期

关键词：

transmission electron microscopy; chemical delineation; Si device; junction profile; metastable polysilicon; SiO2-Si3N4-SiO2; dielectric film;

D O I：

10.1143/JJAP.39.3330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission electron microscopy for a specimen prepared by the chemical delineation technique in Si devices was carried out in order to investigate the dopant profiles of ultra-shallow junctions in various regions. The results demonstrate that the two-dimensional dopant concentration of the junctions can be delineated down to a level of similar to 2.0 x 10(17) cm(-3) with a differentiation of As and P dopant profiles, and can be quantitatively evaluated by comparing the observed and simulated junction profiles. Furthermore, the morphology of metastable polysilicon formed by granulating the polysilicon surface and the thickness of the SiO2-Si3N4-SiO2 dielectric film were clearly observed by stripping the filled polysilicon by the delineation technique.

引用

页码：3330 / 3333

页数：4

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