Room temperature near-field photoluminescence of zinc-blend and wurtzite ZnO structures

被引：24
作者：
Lee, GH
Kawazoe, T
Ohtsu, M
机构：
[1] Dong Eui Univ, Dept Informat Mat Engn, Pusan 614714, South Korea
[2] Japan Sci & Technol Corp, Machida, Tokyo 1940004, Japan
[3] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源：
APPLIED SURFACE SCIENCE | 2005年 / 239卷 / 3-4期
关键词：
ZnO; wurtzite; zinc-blend; near-field photoluminescence;
D O I：
10.1016/j.apsusc.2004.06.004
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Near-field photoluminescence (PL) was measured from ZnO film, composed of nanocrystallites with zinc-blend (ZB) and wurtzite (W) structures, on a sapphire (0 0 0 1) substrate at room temperature (RT). The size of nanocrystallites was in the range of 30-50 nm. Using a fiber probe with aperture size of 80 nm, two near-field emission peaks attributed to one ZB and one W structures were observed. The difference in the emission energies was 0.10 eV close to the calculated bandgap difference between ZB and W structures. The intensity of emission peak from ZB structure with lower energy was stronger than that from W structure, which is supposed to be resulted from the quenched excitonic effect of W structure. (C) 2004 Elsevier B.V. All rights reserved.
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收藏
页码：394 / 397
页数：4
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