Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

被引：59

作者：

Lu, Bin ^{[1
]}

Piner, Edwin L. ^{[2
]}

Palacios, Tomas ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[2] Nitronex Corp, Durham, NC 27703 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 04期

关键词：

Buffer breakdown; GaN-on-silicon; high-electron mobility transistor (HEMT); power electronics; Schottky drain; HEMTS; SILICON; BUFFER; POWER;

D O I：

10.1109/LED.2010.2040704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-mu m-thick GaN buffer showed a threeterminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed a maximum breakdown voltage below 600 V. The improvement of the breakdown voltage has been associated with the planar contact morphology and lack of metal spikes in the Schottky-drain metallization.

引用

页码：302 / 304

页数：3

共 18 条

[1]

Arulkumaran S., 2005, APPL PHYS LETT, V86

[2] AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode [J].

Bahat-Treidel, Eldad ;

Lossy, Richard ;

Wuerfl, Joachim ;

Traenkle, Guenther .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (09) :901-903

[3] A power delivery and decoupling network minimizing ohmic loss and supply voltage variation in silicon nanoscale technologies [J].

Budnik, Mark M. ;

Roy, Kaushik .

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2006, 14 (12) :1336-1346

[4] AlGaN/GaN high electron mobility transistors grown on 150 mm Si(111) substrates with high uniformity [J].

Cheng, Kai ;

Leys, Maarten ;

Degroote, Stefan ;

Derluyn, Joff ;

Sijmus, Brian ;

Favia, Paola ;

Richard, Olivier ;

Bender, Hugo ;

Germain, Marianne ;

Borghs, Gustaaf .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) :1553-1555

[5] The effect of an Fe-doped GaN buffer on OFF-State breakdown characteristics in AlGaN/GaN HEMTs on Si substrate [J].

Choi, Young Chul ;

Pophristic, Milan ;

Cha, Ho-Young ;

Peres, Boris ;

Spencer, Michael G. ;

Eastman, Lester F. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (12) :2926-2931

[6] Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs [J].

Chung, Jinwook W. ;

Lee, Jae-kyu ;

Piner, Edwin L. ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (10) :1015-1017

[7] High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates [J].

Dora, Y. ;

Chakraborty, A. ;

McCarthy, L. ;

Keller, S. ;

DenBaars, S. P. ;

Mishra, U. K. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) :713-715

[8] Effect of ohmic contacts on buffer leakage of GaN transistors [J].

Dora, Y. ;

Chakraborty, A. ;

Heikman, S. ;

McCarthy, L. ;

Keller, S. ;

DenBaars, S. P. ;

Mishra, U. K. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (07) :529-531

[9]

Ikeda N, 2008, INT SYM POW SEMICOND, P287

[10] 12 W/mm AlGaN-GaNHFETs on silicon substrates [J].

Johnson, JW ;

Piner, EL ;

Therrien, R ;

Rajagopal, P ;

Roberts, JC ;

Brown, JD ;

Singhal, S ;

Linthicum, KJ .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (07) :459-461

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