High resolution electron energy loss spectroscopy study of clean, air-exposed and methanol-dosed Ge(100) surface

被引:13
作者
Lim, CW
Soon, JM
Ma, NL
Chen, W
Loh, KP
机构
[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[2] Inst High Performance Comp, Mat & Ind Chem Program, Singapore 117528, Singapore
关键词
electron energy loss spectroscopy; vibrations of adsorbed molecules; germanium; semiconductor surfaces;
D O I
10.1016/j.susc.2004.11.002
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using high resolution electron energy loss spectroscopy (HREELS), we have characterized the fingerprint spectra of clean, hydrogenated, methanol-dosed and air-exposed n-doped Ge(100). On clean Ge(100) 2 x 1, we report the observation of a surface phonon peak between similar to28-35 meV. The position and shape of this peak is sensitive to the presence of low surface coverage of hydrogen and oxygen. By adsorbing molecular hydrogen on the n-doped Ge, this peak shifts towards the elastic peak, and becomes attenuated. The HREELS fingerprint spectrum of air-exposed Ge is similar to that created by dosing Ge with methanol. Methanol undergoes dissociation into methyl radicals and hydroxyl species on Ge surfaces at room temperature and oxidizes the Ge surface readily. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:51 / 59
页数:9
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