The study of the optical phonon frequency of 3C-SiC by molecular dynamics simulations with deep neural network potential

被引:24
作者
Chen, Wei [1 ,3 ]
Li, Liang-Sheng [2 ]
机构
[1] Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing, Peoples R China
[2] Sci & Technol Electromagnet Scattering Lab, Beijing, Peoples R China
[3] Chinese Acad Sci, Dalian Natl Lab Clean Energy, Dalian, Peoples R China
基金
中国国家自然科学基金;
关键词
DEPENDENT DIELECTRIC-CONSTANT; POLARIZABLE IONIC-SOLUTIONS; COMPUTER-SIMULATION; ELECTRICAL-PROPERTIES; 1ST-PRINCIPLES;
D O I
10.1063/5.0049464
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, we implement molecular dynamics (MD) simulations with deep neural network (DNN) potential trained with the datasets from ab initio calculations to determine the dielectric spectra of crystal. The fluctuations of the total dipole moment of crystal, which are obtained from MD, can be directly related to the frequency-dependent permittivity according to the work of Neumann and Steinhauser [Chem. Phys. Lett. 102, 508-513 (1983)]. We generalize their theoretical work to express the permittivity in the form of a tensor and perform MD simulations for cubic silicon carbide (3C-SiC) with 8000 atoms to assess the accuracy. The infrared resonance frequency and the phonon linewidth obtained by the DNN potential are compared with those obtained by the empirical Vashishta potential and experiments. The results of the DNN potential are in good agreement with the experimental measurements. It shows that we can carry out MD simulations for large systems with the accuracy of ab initio calculations to obtain dielectric properties.
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页数:11
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