Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method

被引：2
作者：
Lee, Ching-Sung [1 ]
Hsu, Wei-Chou [2 ]
Liu, Han-Yin [1 ]
Tsai, Jung-Hui [3 ]
Huang, Hung-Hsi [1 ]
机构：
[1] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[3] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 802, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期
关键词：
ALGAN/GAN HEMTS; PERFORMANCE;
D O I：
10.7567/JJAP.55.044102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Al0.25Ga0.75N/GaN enhancement-mode (E-mode) metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) obtained by the ozone water oxidization method are investigated in this work. Decreased gate leakage and reduced channel depletion are obtained by forming the Al2O3 dielectric layer of the MOS gate structure by a cost-effective oxidization method. Pulse current-voltage (I-V), low-frequency noise, and Hooge coefficient measurements are compared to verify the interface quality improved by the oxide passivation effect. In comparison, a conventional Schottky-gate HEMT device is also fabricated on the same epitaxial sample. Enhanced device gain, current drive density, breakdown, on/off current ratio, and high-temperature stability up to 450K are also investigated in this work. (C) 2016 The Japan Society of Applied Physics
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页数：5
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