Optical and electrical characteristics of CO2-laser-treated Mg-doped GaN film

This work investigates the optical and electrical characteristics of CO2-laser annealed Mg-doped GaN films to activate Mg-doped p-type GaN films. Results obtained from the CO2 laser annealing investigation were similar to those of thermal annealing or low energy electron beam irradiation (LEEBI) treatment to activate the Mg-doped p-GaN films. The room-temperature photoluminescence (PL) intensity of the blue emission of the Mg-doped GaN him after 10 W laser annealing was approximately ten times stronger than that of the as-grown film. The resistivity of the Mg-doped GaN him decreased from 10(5) Omega .cm to 2-3 Omega .cm as the laser annealing power rose above 6 W. The hole concentration of Mg-doped GaN film was approximately 1 x 10(17) cm(-3) when the laser annealing power was 7.5 W.