Natural Local Self-Boosting Effect in 3D NAND Flash Memory

被引：45
作者：
Kang, Myounggon [1 ]
Kim, Yoon [2 ]
机构：
[1] Korea Natl Univ Transportat, Dept Elect Engn, Chungju 27469, South Korea
[2] Pusan Natl Univ, Plus Nano Fus Technol Div BK21, Dept Nanoenergy Engn, Busan 609735, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
3D NAND flash memory; program inhibit string; self-boosted inhibit scheme; natural local self-booting (NLSB);
D O I：
10.1109/LED.2017.2736541
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter examined the natural local self-boosting effect of an inhibited channel in three-dimensional (3D) NAND flash memory. The inhibited channel in the 3D NAND flash structure can be in the floating state easily, because its channel is not connected directly to its substrate. Despite the application of the global self-boosted program-inhibit scheme, the selected wordline cell is localized automatically during the program pulse application. This phenomenon is analyzed using a computer-aided design simulation, and an analytical model of boosted potential of an inhibited channel in 3D NAND flash memory is proposed.
引用
收藏
页码：1236 / 1239
页数：4
相关论文
共 12 条
[1]  
[Anonymous], 2014, P IEEE INT REL PHYS, DOI DOI 10.1109/IRPS.2014.6860599
[2]   A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate [J].
Jeong, Woopyo ;
Im, Jae-Woo ;
Kim, Doo-Hyun ;
Nam, Sang-Wan ;
Shim, Dong-Kyo ;
Choi, Myung-Hoon ;
Yoon, Hyun-Jun ;
Kim, Dae-Han ;
Kim, You-Se ;
Park, Hyun-Wook ;
Kwak, Dong-Hun ;
Park, Sang-Won ;
Yoon, Seok-Min ;
Hahn, Wook-Ghee ;
Ryu, Jin-Ho ;
Shim, Sang-Won ;
Kang, Kyung-Tae ;
Ihm, Jeong-Don ;
Kim, In-Mo ;
Lee, Doo-Sub ;
Cho, Ji-Ho ;
Kim, Moo-Sung ;
Jang, Jae-Hoon ;
Hwang, Sang-Won ;
Byeon, Dae-Seok ;
Yang, Hyang-Ja ;
Park, Kitae ;
Kyung, Kye-Hyun ;
Choi, Jeong-Hyuk .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (01) :204-212
[3]   A 117-mm(2) 3.3-V only 128-Mb multilevel NAND flash memory for mass storage applications [J].
Jung, TS ;
Choi, YJ ;
Suh, KD ;
Suh, BH ;
Kim, JK ;
Lim, YH ;
Koh, YN ;
Park, JW ;
Lee, KJ ;
Park, JH ;
Park, KT ;
Kim, JR ;
Yi, JH ;
Lim, HK .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (11) :1575-1583
[4]   An Accurate Compact Model Considering Direct-Channel Interference of Adjacent Cells in Sub-30-nm NAND Flash Technologies [J].
Kang, Myounggon ;
Park, Il Han ;
Chang, Ik Joon ;
Lee, Kyunghwan ;
Seo, Seongjun ;
Park, Byung-Gook ;
Shin, Hyungcheol .
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (08) :1114-1116
[5]   Down-Coupling Phenomenon of Floating Channel in 3D NAND Flash Memory [J].
Kim, Yoon ;
Kang, Myounggon .
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (12) :1566-1569
[6]   A New Programming Method to Alleviate the Program Speed Variation in Three-Dimensional Stacked Array NAND Flash Memory [J].
Kim, Yoon ;
Seo, Joo Yun ;
Lee, Sang-Ho ;
Park, Byung-Gook .
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14 (05) :566-571
[7]   Predictive Modeling of Channel Potential in 3-D NAND Flash Memory [J].
Kim, Yoon ;
Kang, Myounggon .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (11) :3901-3904
[8]   Three-Dimensional NAND Flash Memory Based on Single-Crystalline Channel Stacked Array [J].
Kim, Yoon ;
Kang, Myounggon ;
Park, Se Hwan ;
Park, Byung-Gook .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (08) :990-992
[9]   Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray [J].
Kim, Yoon ;
Yun, Jang-Gn ;
Park, Se Hwan ;
Kim, Wandong ;
Seo, Joo Yun ;
Kang, Myounggon ;
Ryoo, Kyung-Chang ;
Oh, Jeong-Hoon ;
Lee, Jong-Ho ;
Shin, Hyungcheol ;
Park, Byung-Gook .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (01) :35-45
[10]  
Park KT, 2014, ISSCC DIG TECH PAP I, V57, P334, DOI [10.1109/JSSC.2014.2352293, 10.1109/ISSCC.2014.6757458]
12