The fabrication of test structures for phosphorus spin detection using MEV ion-implantation.

被引：0

作者：

Liu, ACY ^{[1
]}

McCallum, JC ^{[1
]}

Wong-Leung, J ^{[1
]}

机构：

[1] Univ Melbourne, Sch Phys, Microanalyt Res Ctr, Ctr Quantum Comp Technol, Melbourne, Vic 3010, Australia

来源：

EXPERIMENTAL IMPLEMENTATION OF QUANTUM COMPUTATION | 2001年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The crystallisation of deep amorphous silicon volumes with lateral dimensions of 1 mum constrained by single crystal silicon is investigated. These volumes, denoted amorphous silicon wells have been formed using MeV ion implantation through a mask. During annealing the amorphous phase is transformed to the crystalline phase through the process of solid phase epitaxy, which involves the organisation of atoms at the interface between the phases. The dynamics of this process and the secondary structures that are incorporated into the crystal have been characterised using atomic force microscopy and transmission electron microscopy. The same mask and a different implantation regime may provide test structures for phosphorus spin detection using magnetic resonance force microscopy.

引用

页码：323 / 326

页数：4