Improvement in gate LWR with plasma curing of ArF photoresists

被引：7

作者：

Ando, A. ^{[1
]}

Matsui, E.

Matsuzawa, N. N.

Yamaguchi, Y.

Kugimiya, K.

Yoshida, M.

Salam, K. M. A.

Kusakabe, T.

Tatsumi, T.

机构：

[1] Sony Corp, Semicond Business Unit, Kanagawa 2430014, Japan

[2] Sony Corp, Mat Labs, Kanagawa 2430021, Japan

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 12期

关键词：

LVVR; HBr plasma; lactonyl unit; ArF;

D O I：

10.1016/j.tsf.2006.10.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The line width roughness (LAIR) in gate electrodes is one of the most critical issues in obtaining sufficient transistor performance in 45-nm half-pitch (hp 45) node devices. ArF (argon fluoride) photoresists are, however, ver l fragile and easily deformed during plasma exposure. We evaluated the change in the chemical nature of an ArF photoresist caused by various plasmas and found that "HBr plasma curing" induces the selective detachment of heterocyclic units in the photoresist. We found that the glass transition temperature (T-g) of the photoresist decreased due to this detachment, leading to surface smoothening of the photoresist layer. Finally, we applied this curing process to the fabrication of line patterns and it was demonstrated that the process remarkably improved LWR. (c) 2006 Elsevier B.V All rights reserved.

引用

页码：4928 / 4932

页数：5