Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

被引：1

作者：

Cano de Andrade, Maria Gloria ^{[1
,2
,3
]}

Martino, Joao Antonio ^{[2
]}

Aoulaiche, Marc ^{[3
]}

Collaert, Nadine ^{[3
]}

Simoen, Eddy ^{[3
]}

Claeys, Cor ^{[3
,4
]}

机构：

[1] Univ Estadual Paulista, UNESP, BR-18087180 Sorocaba, Brazil

[2] Univ Sao Paulo, LSI PSI USP, BR-05508010 Sao Paulo, Brazil

[3] IMEC, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 11期

关键词：

DTMOS FinFETs; Proton irradiation; Analog performance; Low-frequency noise; Flicker noise; Generation-recombination noise; LOW-FREQUENCY NOISE;

D O I：

10.1016/j.microrel.2014.06.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the influence of proton irradiation is experimentally studied in triple-gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance, Drain Induced Barrier Lowering (DIBL) and the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be compared. Furthermore, the Low-Frequency (LF) noise will be also analyzed in the DT mode and the standard biasing configuration. The results indicate that the better electrical characteristics and analog performance of DTMOS FinFETs make them very competitive candidates for low-noise RF analog applications in a radiation environment. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：2349 / 2354

页数：6

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