Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future

被引：6

作者：

Haddadi, Abbas ^{[1
]}

Dehzangi, Arash ^{[1
]}

Chevallier, Romain ^{[1
]}

Yang, Thomas ^{[1
]}

Razeghi, Manijeh ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, 2220 Campus Dr, Evanston, IL 60208 USA

来源：

QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XV | 2018年 / 10540卷

关键词：

HETEROSTRUCTURE BIPOLAR-TRANSISTORS; LIGHT DETECTION; GAIN;

D O I：

10.1117/12.2297475

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Most of reported HPTs in literatures are based on InGaAs compounds that cover NIR spectral region. However, InGaAs compounds provide limited cut-off wavelength tunability. In contrast, type-II superlattices (T2SLs) are a developing new material system with intrinsic advantages such as great flexibility in bandgap engineering, low growth and manufacturing cost, high-uniformity, auger recombination suppression, and high carrier effective mass that are becoming an attractive candidate for infrared detection and imaging from short-wavelength infrared to very long wavelength infrared regime. We present the recent advancements in T2SL-based heterojunction phototransistors in e- SWIR, MWIR and LWIR spectral ranges. A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Then, we present the effect of vertical scaling on the optical and electrical performance of heterojunction phototransistors, where the performance of devices with different base width was compared as the base was scaled from 60 down to 40 nm.

引用

页数：12

共 48 条

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