Atomic layer epitaxial growth of ZnSxSe1-x on Si substrate

被引:2
作者
Yokoyama, M
Chen, NT
Ueng, HY
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4A期
关键词
optoelectronic; ultraviolet; ALE; MOCVD; lattice match;
D O I
10.1143/JJAP.39.1665
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-quality undoped ZnSSe epitaxial layers are successfully grown on (100)-Si substrates by atomic layer epitaxy (ALE) in a modified low-pressure horizontal metal organic chemical vapor deposition (MOCVD) system using DMZn, H2S and H2Se as reactants at a growth temperature of 175 degrees C and a growth pressure of 30 Torr. The vapor-solid relationship for the group VT elements are obtained experimentally. The lattice of the ZnSxSe1-x layer with sulfur content estimated to be about 93% is found to have the best lattice match to the Si substrate, as indicated by the good layer thickness uniformity, surface morphology and narrow X-ray diffraction rocking curve linewidth with a minimal FWHM of about 0.16 degrees (570 arcsec). In addition, PL spectra exhibited a strong near-band-edge emission and weak deep-level emissions in the longer wavelength region for the epitaxial layer of ZnS0.93Se0.07. Results indicate good lattice match because of a low number of interfacial and epitaxial layer defects.
引用
收藏
页码:1665 / 1668
页数:4
相关论文
共 20 条
[1]   OMVPE OF ZN-BASED II-IV SEMICONDUCTORS USING METHYLMERCAPTAN AS A NOVEL SULFUR SOURCE [J].
FUJITA, S ;
ISEMURA, M ;
SAKAMOTO, T ;
YOSHIMURA, N .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :263-267
[2]  
FUJITA S, 1984, JPN J APPL PHYS, V23, P360
[3]   PREPARATION AND PROPERTIES OF (ZNS)(3)(ZNSE)(42) ORDERED ALLOYS FABRICATED BY PLASMA-ENHANCED LOW-TEMPERATURE GROWTH TECHNIQUE [J].
FUJIWARA, H ;
NABETA, T ;
KIRYU, H ;
SHIMIZU, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7B) :4381-4384
[4]   STRUCTURES AND PROPERTIES OF (ZNS)N(ZNSE)M (N=1-4) ORDERED ALLOYS GROWN BY ATOMIC LAYER EPITAXY [J].
FUJIWARA, H ;
NABETA, T ;
SHIMIZU, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (5A) :2474-2478
[5]  
FUJIWARA H, 1994, J APPL PHYS, V77, P3927
[6]   OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
GOETZ, KH ;
BIMBERG, D ;
JURGENSEN, H ;
SELDERS, J ;
SOLOMONOV, AV ;
GLINSKII, GF ;
RAZEGHI, M .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552
[7]   GROWTH AND THERMODYNAMIC ANALYSIS OF ATOMIC LAYER EPITAXY OF ZNSXSE1-X [J].
KOUKITU, A ;
IKEDA, H ;
MIYAZAWA, T ;
SEKI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1463-L1466
[8]   ATMOSPHERIC-PRESSURE ATOMIC LAYER EPITAXY OF ZNSE USING ZN AND H2SE [J].
KOUKITU, A ;
SAEGUSA, A ;
KITHO, M ;
IKEDA, H ;
SEKI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2165-L2168
[9]   Atomic layer epitaxy of ZnS by low-pressure horizontal metalorganic chemical vapor deposition [J].
Liu, CH ;
Yokoyama, M ;
Su, YK ;
Lee, NC .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (5A) :2749-2753
[10]   Effect of atomic layer epitaxy growth conditions on the properties of ZnS epilayers on (100)-Si substrate [J].
Liu, CH ;
Yokoyama, M ;
Su, YK .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (10) :5416-5420