Light intensity dependence of photocurrent gain in single-crystal diamond detectors

被引：88

作者：

Liao, Meiyong ^{[1
]}

Wang, Xi ^{[1
]}

Teraji, Tokuyuku ^{[1
]}

Koizumi, Satoshi ^{[1
]}

Koide, Yasuo ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 03期

关键词：

FILMS;

D O I：

10.1103/PhysRevB.81.033304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The authors report on the photocurrent gain in a diamond photodetector that has two nonohmic contacts connected back-to-back. This photocurrent gain strongly depends on both the deep-ultraviolet (DUV) light intensity and the applied voltage. In addition, the gain is accompanied by a slow response. The gain is observed to originate from a metal/diamond interface trap center. Numerical analysis discloses that the photocurrent-voltage characteristics follow thermionic-field emission tunneling at low DUV light intensity and field-emission tunneling at high DUV light intensity. The deep traps are thought to produce a thin interface barrier layer at the metal/diamond interface under DUV illumination, which is responsible for the tunneling processes.

引用

页数：4

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