Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics

被引:54
作者
Zhou, Weiping [1 ,2 ,3 ,4 ]
Xiong, Yuanqiang [2 ,3 ,4 ]
Zhang, Zhengming [5 ]
Wang, Dunhui [2 ,3 ,4 ]
Tan, Weishi [1 ]
Cao, Qingqi [2 ,3 ,4 ]
Qian, Zhenghong [6 ]
Du, Youwei [2 ,3 ,4 ]
机构
[1] Nanjing Univ Sci & Technol, Dept Appl Phys, Nanjing 210094, Jiangsu, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
[4] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
[5] Nanjing Tech Univ, Sch Phys & Math Sci, Nanjing 211816, Jiangsu, Peoples R China
[6] Hangzhou Dianzi Univ, CISD, Hangzhou 310018, Peoples R China
关键词
multilevel memory; straintronics; spintronics; nonvolatile; resistance switching; heterostructure; ELECTRIC-FIELD; TRANSPORT-PROPERTIES; FILMS; MAGNETIZATION; TRANSITION; STRAIN; RESISTIVITY; ENERGY; STATES;
D O I
10.1021/acsami.5b11392
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We demonstrate a memory device with multi-field switchable multilevel states at room temperature based on the integration of straintronics and spintronics in a La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) (011) heterostructure. By precisely controlling the electric field applied on the PMN PT substrate, multiple nonvolatile resistance states can be generated in La2/3Ba1/3MnO3 films, which can be ascribed to the strain-modulated metal insulator transition and phase separation of Manganite. Furthermore, because of the strong coupling between spin and charge degrees of freedom, the resistance of the La2/3Ba1/3MnO3 film can be readily modulated by magnetic field over a broad temperature range. Therefore, by combining magnetoresistance effects, multilevel resistance states with excellent retention and endurance properties can be achieved at room temperature with the coactions of electric and magnetic fields. The incorporation of ferroelastic strain and magnetic and resistive properties in memory cells suggests a promising approach for multistate, high-density, and low-power consumption electronic memory devices.
引用
收藏
页码:5424 / 5431
页数:8
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