Growth and characterization of thin Si80C20 films based upon Si4C building blocks

被引：19

作者：

Kouvetakis, J

Chandrasekhar, D

Smith, DJ ^{[1
]}

机构：

[1] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.120876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of thin Si80C20 diamond-structured material on (100)Si has been achieved using the novel C-H free, carbon source tetrasilyl methane, C(SiH3)(4). The precursor decomposes at temperatures in the range 600-700 degrees C to give thin amorphous layers with a composition of Si0.80C0.20, which corresponds to the same relative concentrations of Si and C as in the precursor. The amorphous material is crystallized via solid-phase epitaxy by annealing at 825 degrees C to yield a potentially ordered structure in which Si4C tetrahedra are linked together in a three-dimensional diamond-cubic framework. Measured lattice parameters are larger than expected from Vegards' Law, a discrepancy which is attributed to steric repulsions causing bond elongation. (C) 1998 American Institute of Physics.

引用

页码：930 / 932

页数：3

共 15 条

[1]

ADAMS GB, UNPUB

[2] TETRASILYLMETHANE, C(SIH3)4, THE SI/C-INVERSE OF TETRAMETHYLSILANE, SI(CH3)4 [J].