Pup AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)

被引：1

作者：

Kumakura, Kazuhide ^{[1
]}

Makimoto, Toshiki ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

heterojunction bipolar transistor; base sheet resistance; InGaN; pnp;

D O I：

10.1143/JJAP.46.2338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the current-voltage characteristics of pup AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 x 10(19) to 2 x 10(20) cm(-3). Base sheet resistance was less than 100 Omega/square for the base width of 30 nm and Si-doping concentration of 2 x 10(20) cm(-3). This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 10(20) cm(-3). The capability to decrease the base resistance will be advantageous for high-frequency operation.

引用

页码：2338 / 2340

页数：3

Pup AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (&lt; 100 Ω/square)

Pup AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)