Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

被引：124

作者：

Cao, Rongrong ^{[1
]}

Song, Bing ^{[1
]}

Shang, D. S. ^{[2
,3
]}

Yang, Yang ^{[2
,3
]}

Luo, Qing ^{[2
,3
]}

Wu, Shuyu ^{[2
,3
]}

Li, Yue ^{[2
,3
]}

Wang, Yan ^{[2
,3
]}

Lv, Hangbing ^{[2
,3
]}

Liu, Qi ^{[2
,3
]}

Liu, Ming ^{[2
,3
]}

机构：

[1] Natl Univ Def Technol, Coll Elect Sci & Engn, Changsha 410073, Hunan, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Ru/HZO/Ru; leakage current; breakdown field; endurance property; THIN-FILMS; MEMORY;

D O I：

10.1109/LED.2019.2944960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the endurance property of Hf0.5Zr0.5O2(HZO) based ferroelectric capacitor has been improved using Ru electrodes. Compared to the widely used TiN/HZO/TiN capacitor, the Ru/HZO/Ru capacitor shows comparable remnant polarization (similar to 20 mu C/cm(2)), lower leakage current (5.67x10(-5)A/cm(2)) and higher breakdown electric field (similar to 4 MV/cm) at room temperature. The reduction of the leakage current and the enhancement of the breakdown electric field, which are ascribed to the small number of defects and vacancies in HZO thin films with Ru electrodes, prompt the endurance improvement of HZO-based capacitor from 3 x 10(10) cycles for TiN electrodes at 3 MV/cm to more than 1.2 x 10(11) cycles for Ru electrodes at 3.5 MV/cm. This work provides an effective way to reduce the leakage current and improve the endurance property of HZO-based capacitors.

引用

页码：1744 / 1747

页数：4

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