Design and Analysis of Self-Switchable Low Noise Amplifier for Sub-6 GHz 5G NR

被引：0

作者：

Pandey, Deeksha ^{[1
]}

Pathak, Nagendra Prasad ^{[1
]}

机构：

[1] Indian Inst Technol Roorkee, Dept Elect & Commun, Roorkee, Uttar Pradesh, India

来源：

2021 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC) | 2021年

关键词：

Low noise amplifier; self-switchable LNA; pHEMT; enhancement mode;

D O I：

10.1109/IMaRC49196.2021.9714670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the design and analysis of a two-stage low noise amplifier (LNA) MMIC using GaAs pHEMT technology with a transistor gate length of 0.1 mu m. The selected center frequency of designed LNA is 3.5 GHz, suitable for sub-6 GHz 5G NR. The simulated gain of the designed LNA is 34.43 +/- 0.9 dB from 3.4 to 3.6 GHz, while the noise figure is 0.71 dB at 3.5 GHz. The designed LNA MMIC has also been made switchable to protect circuit from the high power signal. The gain of the switchable LNA circuit is 31.93 dB, with a noise figure of 0.91 dB at the center frequency of 3.5 GHz.

引用

页数：4

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