Growth of ZnSe1-xTex Nanotips and the Fabrication of ZnSe1-xTex Nanotip-Based Photodetector

被引：9

作者：

Chang, S. J. ^{[1
,2
]}

Hsiao, C. H. ^{[1
,2
]}

Hung, S. C. ^{[3
]}

Chih, S. H. ^{[1
,2
]}

Lan, B. W. ^{[1
,2
]}

Wang, S. B. ^{[1
,2
]}

Chang, S. P. ^{[1
,2
]}

Cheng, Y. C. ^{[4
]}

Li, T. C. ^{[4
]}

Huang, B. R. ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 701, Taiwan

[3] Shih Chien Univ, Dept Informat Technol & Commun, Kaohsiung 845, Taiwan

[4] Chung Shan Inst Sci & Technol, Mat & Electroopt Res Div, Tao Yuan 325, Taiwan

[5] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Grad Inst Electroopt Engn, Taipei 106, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 01期

关键词：

MOLECULAR-BEAM EPITAXY; LIGHT-EMITTING-DIODES; GREEN LASER-DIODE; ZNSE NANOWIRES; BLUE; DEPOSITION;

D O I：

10.1149/1.3246004

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 mu m. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3246004] All rights reserved.

引用

页码：K1 / K4

页数：4

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