机构:
Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, JapanTohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, Japan
Watanabe, T
[1
]
Sakuraba, M
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h-index: 0
机构:
Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, JapanTohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, Japan
Sakuraba, M
[1
]
Matsuura, T
论文数: 0引用数: 0
h-index: 0
机构:
Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, JapanTohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, Japan
Matsuura, T
[1
]
Murota, J
论文数: 0引用数: 0
h-index: 0
机构:
Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, JapanTohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, Japan
Murota, J
[1
]
机构:
[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, Japan
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
|
1997年
/
36卷
/
6B期
关键词:
single atomic layer;
dimer structure;
hydride;
D O I:
10.1143/JJAP.36.4042
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The single atomic layer growth process of Si on a Ge(100) surface using SiH4 has been investigated by ultraclean cold-wall low-pressure chemical vapor deposition (CVD). Self-limiting reaction of SiH4 on the Ge surface was found at 260 degrees C and the reaction step can be explained by Langmuir-type kinetics. The saturated surface concentration of Si atoms depends on the preheating conditions. A single atomic layer was found for preheating at 350 degrees C in Ar and at 260 degrees C in H-2. However, in the case of preheating in H-2 at 350 degrees C, the Si atom concentration hardly reached that of a single atomic layer. Reflection high-energy electron diffraction (RHEED) and Fourier-transform infrared reflection adsorption spectroscopy (FTIR/RAS) observations showed that a H-terminated dimer structure was formed on the Ge(100) surface after preheating in H-2 at 350 degrees C. The density of the SiH4 reaction sites on the H-terminated surface with the dimer structure is considered to be lower than that of the H-terminated unreconstructed surface and the H-free surface.