Electron transport in some transition metal di-chalcogenides: MoS2 and WS2

被引:21
作者
Ferry, D. K. [1 ]
机构
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
关键词
electron transport; phonon scattering; devices; nanostructures; MONOLAYER MOS2; LAYER; MOBILITY; PERFORMANCE; TRANSISTORS;
D O I
10.1088/1361-6641/aa7472
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The transition metal di-chalcogenides are promising single monolayer materials that hold promise for applications in several fields, including nanoelectronics. Here, I study the transport of electrons in two of these materials, MoS2 and WS2. While the low-field behavior shows very low mobility, due mostly to impurity scattering, the high-field behavior shows a relatively high saturated velocity and a high breakdown field. Complications arise due to the relative narrowness of the conduction band, and the effect of this on the transport is discussed.
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页数:8
相关论文
共 42 条
[1]   The upper limit of the cutoff frequency in ultrashort gate-length InGaAs/InAlAs HEMTs: A new definition of effective gate length [J].
Akis, Richard ;
Ayubi-Moak, Jason S. ;
Faralli, Nicolas ;
Ferry, David K. ;
Goodnick, Stephen M. ;
Saraniti, Marco .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) :306-308
[2]   High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects [J].
Bao, Wenzhong ;
Cai, Xinghan ;
Kim, Dohun ;
Sridhara, Karthik ;
Fuhrer, Michael S. .
APPLIED PHYSICS LETTERS, 2013, 102 (04)
[3]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[4]   Optical-Phonon-Limited High-Field Transport in Layered Materials [J].
Chandrasekar, Hareesh ;
Ganapathi, Kolla Lakshmi ;
Bhattacharjee, Shubhadeep ;
Bhat, Navakanta ;
Nath, Digbijoy N. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (02) :767-772
[5]   Benchmarking nanotechnology for high-performance and low-power logic transistor applications [J].
Chau, R ;
Datta, S ;
Doczy, M ;
Doyle, B ;
Jin, J ;
Kavalieros, J ;
Majumdar, A ;
Metz, M ;
Radosavljevic, M .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (02) :153-158
[6]   Electron velocity saturation and intervalley transfer in monolayer MoS2 [J].
Ferry, D. K. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (11)
[7]  
Ferry D K, 1991, SEMICONDUCTORS, P321
[8]  
Ferry D K, 1991, SEMICONDUCTORS, P354
[9]   Velocity saturation in few-layer MoS2 transistor [J].
Fiori, Gianluca ;
Szafranek, Bartholomaeus N. ;
Iannaccone, Giuseppe ;
Neumaier, Daniel .
APPLIED PHYSICS LETTERS, 2013, 103 (23)
[10]   MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].
FIVAZ, R ;
MOOSER, E .
PHYSICAL REVIEW, 1967, 163 (03) :743-&