Total ionizing dose effects in multiple-gate field-effect transistor

被引：17
作者：
Gaillardin, Marc [1 ]
Marcandella, Claude [1 ]
Martinez, Martial [1 ]
Raine, Melanie [1 ]
Paillet, Philippe [1 ]
Duhamel, Olivier [1 ]
Richard, Nicolas [1 ]
机构：
[1] CEA, DAM, DIF, F-91297 Arpajon, France
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2017年 / 32卷 / 08期
关键词：
total ionizing dose; bulk silicon; SOI; FinFET; nanowire; multiple-gate; gate-all-around; RADIATION RESPONSE; BIAS DEPENDENCE; FIN-WIDTH; SILICON; DEGRADATION; DEVICE; TECHNOLOGIES; TOLERANCE; MOSFETS; NARROW;
D O I：
10.1088/1361-6641/aa6c02
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect transistors. The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technologies. These innovating devices exhibit specific ionizing dose responses which strongly depend on their three-dimensional nature. Their TID responses may look like the one usually observed in planar two-dimensional bulk or SOI transistors, but multiple-gate devices can also behave like any other CMOS device.
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页数：12
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