Total ionizing dose effects in multiple-gate field-effect transistor

被引：16

作者：

Gaillardin, Marc ^{[1
]}

Marcandella, Claude ^{[1
]}

Martinez, Martial ^{[1
]}

Raine, Melanie ^{[1
]}

Paillet, Philippe ^{[1
]}

Duhamel, Olivier ^{[1
]}

Richard, Nicolas ^{[1
]}

机构：

[1] CEA, DAM, DIF, F-91297 Arpajon, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2017年 / 32卷 / 08期

关键词：

total ionizing dose; bulk silicon; SOI; FinFET; nanowire; multiple-gate; gate-all-around; RADIATION RESPONSE; BIAS DEPENDENCE; FIN-WIDTH; SILICON; DEGRADATION; DEVICE; TECHNOLOGIES; TOLERANCE; MOSFETS; NARROW;

D O I：

10.1088/1361-6641/aa6c02

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect transistors. The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technologies. These innovating devices exhibit specific ionizing dose responses which strongly depend on their three-dimensional nature. Their TID responses may look like the one usually observed in planar two-dimensional bulk or SOI transistors, but multiple-gate devices can also behave like any other CMOS device.

引用

页数：12

共 81 条

[1]

Agopian P. G. D., 2011, Proceedings of the 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS), P7, DOI 10.1109/RADECS.2011.6131291

[2] Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors [J].