We study the electronic structure and transport properties of Dirac electrons along a channel created by an exchange field through the proximity of ferromagnets on a silicene sheet. The multiple total internal reflection induces localized states in the channel, which behaves like an electron waveguide. An effect of spin- and valley-filtering originating from the coupling between valley and spin degrees is predicted for such a structure. Interestingly, this feature can be tuned significantly by locally applying electric and exchange fields simultaneously. The parameter condition for observing fully spin- and valley-polarized current is obtained. These findings may be observable in todays' experimental technique and useful for spintronic and valleytronic applications based on silicene. (C) 2014 AIP Publishing LLC.
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Zunyi Normal Coll, Dept Phys, Zunyi 563002, Peoples R ChinaZunyi Normal Coll, Dept Phys, Zunyi 563002, Peoples R China
Ren, Chongdan
Zhou, Benhu
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Shaoyang Univ, Dept Phys, Shaoyang 422001, Peoples R ChinaZunyi Normal Coll, Dept Phys, Zunyi 563002, Peoples R China
Zhou, Benhu
Sun, Minglei
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Southeast Univ, Sch Mech Engn, Nanjing 211189, Jiangsu, Peoples R China
ASTAR, Inst High Performance Comp, Singapore 138632, SingaporeZunyi Normal Coll, Dept Phys, Zunyi 563002, Peoples R China
Sun, Minglei
Wang, Sake
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Jinling Inst Technol, Dept Fundamental Courses, Nanjing 211169, Jiangsu, Peoples R ChinaZunyi Normal Coll, Dept Phys, Zunyi 563002, Peoples R China
Wang, Sake
Li, Yunfang
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Linyi Univ, Sch Mech & Vehicle Engn, Linyi 276005, Peoples R ChinaZunyi Normal Coll, Dept Phys, Zunyi 563002, Peoples R China
Li, Yunfang
Tian, Hongyu
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Linyi Univ, Sch Phys & Elect Engn, Linyi 276005, Peoples R ChinaZunyi Normal Coll, Dept Phys, Zunyi 563002, Peoples R China
Tian, Hongyu
Lu, Weitao
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Linyi Univ, Sch Phys & Elect Engn, Linyi 276005, Peoples R ChinaZunyi Normal Coll, Dept Phys, Zunyi 563002, Peoples R China
机构:
Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R ChinaHebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R China
Zhang, Yan-Yang
Liu, Jian-Jun
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Shijiazhuang Univ, Dept Phys, Shijiazhuang 050035, Peoples R ChinaHebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R China
Liu, Jian-Jun
Li, Shu-Shen
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Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R ChinaHebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R China
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Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Zhang, Qingtian
Chan, K. S.
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City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 5183000, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Chan, K. S.
Li, Jingbo
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Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China