Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering

被引:193
作者
Suchea, M.
Christoulakis, S.
Katsarakis, N.
Kitsopoulos, T.
Kiriakidis, G.
机构
[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Iraklion 71110, Crete, Greece
[2] Univ Crete, Dept Chem, Iraklion 71110, Greece
[3] Univ Crete, Dept Phys, Iraklion 71110, Crete, Greece
[4] Technol Educ Onst Crete, Sch Appl Technol, Ctr Mat Technol & Laser, Dept Sci, Iraklion 71004, Crete, Greece
关键词
zinc oxide; dc magnetron sputtering; surface morphology; sensors;
D O I
10.1016/j.tsf.2006.11.151
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pure and aluminum (Al) doped zinc oxide (ZnO and ZAO) thin films have been grown using direct current (dc) magnetron sputtering from pure metallic Zn and ceramic ZnO targets, as well as from Al-doped metallic ZnAl2at.% and ceramic ZnAl2at.%O targets at room temperature (RT). The effects of target composition on the film's surface topology, crystallinity, and optical transmission have been investigated for various oxygen partial pressures in the sputtering atmosphere. It has been shown that At-doped ZnO films sputtered from either metallic or ceramic targets exhibit different surface morphology than the undoped ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (002). More significantly, Al-doping leads to a larger increase of the optical transmission and energy gap (Eg) of the metallic than of the ceramic target prepared films. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:6562 / 6566
页数:5
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