CMOS Class-E Power Amplifier Module with CPW Bonding Wires for 5GHz Application

This paper presents a CMOS class-E power amplifier (PA) with high efficiency for 5GHz band wireless-mesh-network system using constant envelope modulation scheme. The proposed class-E PA employs injection-locking technique and parasitic compensation to reduce the required DC input power. This PA is realized by using 0.18 um CMOS process. This PA is placed on the lead frame and molded in the package for transmitter application. In our design, the position and length of the bonding wires are optimized by using EM simulation. In addition, a coplanar waveguide (CPW) structure was realized by the bonding wires in the RF port. Our PA module has a measured PAE = 41.0 %.