Evidence of weak-antilocalization phenomenon in Al-induced crystallization grown polycrystalline-SiGe thin film

被引：1
作者：
Sain, Twisha [1 ]
Singh, Ch. Kishan [1 ]
Amaladass, E. P. [1 ]
Abhirami, S. [1 ]
Ilango, S. [1 ]
Mathews, T. [1 ]
Mani, Awadhesh [1 ]
机构：
[1] HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
来源：
MATERIALS LETTERS | 2021年 / 300卷
关键词：
Thin films; Al-doping; Polycrystalline-SiGe; Magneto-resistance; Weak-antilocalization effect; Semiconductors; MAGNETORESISTANCE;
D O I：
10.1016/j.matlet.2021.130164
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the low-temperature magneto-transport properties of a polycrystalline-SiGe thin film realized on glass at 350 celcius via Al-induced layer exchange crystallization. The film exhibits a degenerate p-type behavior, and we observed evidence of weak-antilocalization (WAL) effect that manifests as an anomalous positive magnetoresistance (MR) below 10 K and weak magnetic fields (B) between +/- 1 Tesla. While the spin-orbit coupling length is nearly constant at - 40 nm, the temperature dependence of phase-coherence length, which has a maximum value at 4 K (-131 nm), indicates hole-hole scattering as the predominant de-phasing mechanism. This result shows the degenerate Al doping causes the WAL effect in the present system.
引用
收藏
页数：3
相关论文
共 14 条
  • [1] Enhanced linear magnetoresistance of germanium at room temperature due to surface imperfection
    Chen, Jiaojiao
    Piao, Hong-Guang
    Luo, Zhaochu
    Zhang, Xiaozhong
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (17)
  • [2] Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime
    Chou, C. -T.
    Jacobson, N. T.
    Moussa, J. E.
    Baczewski, A. D.
    Chuang, Y.
    Liu, C. -Y.
    Li, J. -Y.
    Lu, T. M.
    [J]. NANOSCALE, 2018, 10 (44) : 20559 - 20564
  • [3] HIKAMI S, 1980, PROG THEOR PHYS, V63, P707, DOI 10.1143/PTP.63.707
  • [4] Ihn T., 2009, Semicond. Nanostructures, P287, DOI [10.1093/acprof:oso/9780199534425.003.0016, DOI 10.1093/ACPROF:OSO/9780199534425.003.0016, 10.1093/acprof:oso/9780199534425.001.0001, DOI 10.1093/ACPROF:OSO/9780199534425.001.0001]
  • [5] Suppression and Revival of Weak Localization through Control of Time-Reversal Symmetry
    Mueller, K.
    Richard, J.
    Volchkov, V. V.
    Denechaud, V.
    Bouyer, P.
    Aspect, A.
    Josse, V.
    [J]. PHYSICAL REVIEW LETTERS, 2015, 114 (20)
  • [6] Weak localization and weak antilocalization in doped germanium epilayers
    Newton, P. J.
    Mansell, R.
    Holmes, S. N.
    Myronov, M.
    Barnes, C. H. W.
    [J]. APPLIED PHYSICS LETTERS, 2017, 110 (06)
  • [7] Non-saturating magnetoresistance in heavily disordered semiconductors
    Parish, MM
    Littlewood, PB
    [J]. NATURE, 2003, 426 (6963) : 162 - 165
  • [8] Weak localization in ZnO: Ga and ZnO: Al thin films
    Reukova, O. V.
    Kytin, V. G.
    Kulbachinskii, V. A.
    Burova, L. I.
    Kaul, A. R.
    Ulyashin, A. G.
    [J]. 27TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT27), PTS 1-5, 2014, 568
  • [9] Electrical transport and optical properties of Al doped polycrystalline SiGe alloy thin film
    Sain, Twisha
    Singh, Ch Kishan
    Amaladass, E. P.
    Ilango, S.
    Mathews, T.
    Mani, Awadhesh
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2021, 258 (258)
  • [10] Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass
    Sain, Twisha
    Singh, Ch Kishan
    Ilango, S.
    Mathews, T.
    [J]. JOURNAL OF APPLIED PHYSICS, 2019, 126 (12)
12