Characterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurements

被引：26
作者：
Hagimoto, Y
Fujioka, H
Oshima, M
Hirose, K
机构：
[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[2] Inst Space & Astronaut Sci, Kanagawa 2298510, Japan
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 25期
关键词：
D O I：
10.1063/1.1334657
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have characterized the carrier-trapping phenomena in ultrathin (1.3-3.5 nm) SiO2 films (practical used thermal oxide and oxynitride) by using x-ray photoelectron spectroscopy time-dependent measurements. It was found that the net amount of hole traps in the ultrathin oxynitride is smaller than that in the ultrathin thermal oxide. This result is consistent with the previously reported results for the thick thermal oxide and oxynitride using conventional electrical measurements. We consider what is responsible for the contribution to the formation of hole traps. (C) 2000 American Institute of Physics. [S0003-6951(00)03552-X].
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页码：4175 / 4177
页数：3
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